10月24日，由SEMI(國(guó)際半導(dǎo)體設(shè)備與材料協(xié)會(huì))中國(guó)主辦，南昌高新區(qū)企業(yè)中微半導(dǎo)體設(shè)備公司承辦的化合物半導(dǎo)體制程設(shè)備及技術(shù)研討會(huì)在南昌舉行，南昌市發(fā)改委副主任鐘堅(jiān)、南昌市科技局副局長(zhǎng)黃端偉、高新區(qū)管委會(huì)副調(diào)研員楊磊出席會(huì)議。

作為業(yè)內(nèi)專業(yè)性極強(qiáng)的學(xué)術(shù)會(huì)議，本次研討會(huì)邀請(qǐng)了國(guó)內(nèi)半導(dǎo)體行業(yè)眾多知名企業(yè)家和專家學(xué)者，重點(diǎn)探討化合物半導(dǎo)體領(lǐng)域SiC器件、GaN功率電子、MicroLED顯示最新技術(shù)進(jìn)展，以及核心制程設(shè)備對(duì)于新技術(shù)快速發(fā)展過(guò)程中所面臨的挑戰(zhàn)。北京世紀(jì)金光半導(dǎo)體有限公司有幸受邀首次參加研討會(huì)，并以“Next Generation SiC Power Device Design, Fabrication Technology and Trends”為題，與業(yè)內(nèi)學(xué)者共同探討第三代半導(dǎo)體碳化硅技術(shù)的應(yīng)用與發(fā)展。

近年來(lái)，隨著以碳化硅(SiC)、氮化鎵(GaN)為主的第三代化合物半導(dǎo)體新材料陸續(xù)應(yīng)用在二極管、金屬氧化物場(chǎng)效應(yīng)晶體管、高電子遷移率晶體管等器件上，新技術(shù)革命的序幕已經(jīng)拉開，高成長(zhǎng)性的應(yīng)用市場(chǎng)雛形已經(jīng)初現(xiàn)。作為全球性戰(zhàn)略材料的制高點(diǎn)，碳化硅功率器件因其耐高壓、低損耗、高效率等特性，在高溫、高頻、大功率、光電子以及抗輻射等方面具有巨大的應(yīng)用潛力。除了民用領(lǐng)域外，在航天、軍工、核能等極端環(huán)境應(yīng)用有著不可替代的優(yōu)勢(shì)。

Abstract：Silicon Carbide (SiC) is an attractive material for power semiconductor devices due to its high thermal conductivity, high saturated drift velocity, and high breakdown electric field. SiC power devices, such as SiC SBDs, MOSFETs and JFETs, have been commercialized With a wide range of applications including power supplies, electric vehicles, industrial equipment, and electrical appliances. Pursuing lower cost, less conduction loss and higher performance, new device designs  are being hotly discussing and researching, including trench device, floating junction device , super junction device and trench super junction device. Especially for SiC SBD and MOSFET, trench structures are the main develop trends for the next generation design. Those new designs raise more requirements and challenges for the fabrication technology. CENGOL has developed several novel SBD and MOSFET designs, fabrication process and prototypes, promising to improve the process cost and device performance.

Key words: SiC; SBD; MOSFET;Trench Device;Fabrication Process